发表于：2009/9/8 9:31:04
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atmel 爱特梅尔
＞
eeprom存储器
at28hc256e-12tu 256kbit,并行eeproms存储器tsop-28封装
density
256k
organization
32k x 8
speed
70, 90, 120 ns
vcc (v)
4.5-5.5
packages
flat pack 28
lcc 32
pdip 28
pga 28
plcc 32
cerdip 28
soic (300mil) 28
tsop 28
pb-free
packages
plcc 32
soic (300mil) 28
tsop 28
256k eeprom with 64-byte page software protection
the
at28hc256
is a high-performance electrically erasable and programmable readonly memory. its 256k of memory is organized as 32,768 words by 8 bits. manufactured with atmel’s advanced nonvolatile cmos technology, the at28hc256 offers access times to 70 ns with power dissipation of just 440 mw. when the at28hc256 is deselected, the standby current is less than 5 ma.
the
at28hc256
is accessed like a static ram for the read or write cycle without the need for external components. the device contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. during a write cycle, the address and 1 to 64 bytes of data are internally latched, freeing the addresses and data bus for other operations. following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer. the end of a write cycle can be detected by data polling of i/o7. once the end of a write cycle has been detected a new access for a read or write can begin. atmel’s 28hc256 has additional features to ensure high quality and manufacturability. the device utilizes internal error correction for extended endurance and improved data retention characteristics. an optional software data protection mechanism is available to guard against inadvertent writes. the device also includes an extra 64 bytes of eeprom for device identification or tracking.
at28hc256e-12tu 特征
fast read access time – 70 ns
automatic page write operation
– internal address and data latches for 64 bytes
– internal control timer
fast write cycle times
– page write cycle time: 3 ms or 10 ms maximum
– 1 to 64-byte page write operation
low power dissipation
– 80 ma active current
– 3 ma standby current
hardware and software data protection
data polling for end of write detection
high reliability cmos technology
– endurance: 104 or 105 cycles
– data retention: 10 years
single 5v ± 10% supply
cmos and ttl compatible inputs and outputs
jedec approved byte-wide pinout
full military and industrial temperature ranges
green (pb/halide-free) packaging option
at28hc256e-12tu 订购型号
tacc
(ns)
icc (ma)
ordering code
package
operation range
active
standby
70
80
0.3
at28hc256-70ju
32j
industrial
(-40° to 85°c)
at28hc256-70su
28s
at28hc256-70tu
28t
90
80
0.3
at28hc256-90ju
32j
at28hc256e-90ju
at28hc256f-90ju
at28hc256-90su
28s
at28hc256e-90su
at28hc256f-90su
at28hc256-90tu
28t
at28hc256e-90tu
at28hc256f-90tu
120
80
0.3
at28hc256-12ju
32j
at28hc256e-12ju
at28hc256f-12ju
at28hc256-12su
28s
at28hc256e-12su
at28hc256f-12su
at28hc256-12tu
28t
at28hc256e-12tu
at28hc256f-12tu
at28hc256e-12tu 技术支持
atmel 爱特梅尔eeprom存储器at28hc256 数据手册datasheet 下载
. pdf（完整版）
并行eeprom 产品选型指南
（
[URL=http://www.bdtic.com/]
[/URL]
excel 文档格式）
中文版
atmel 汽车应用解决方案
英文版
atmel 汽车应用解决方案
嵌入式系统中eeprom文件系统的设计与实现
atmel 爱特梅尔公司全线产品目录
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原文地址： Http://blog.gkong.com/more.asp?id=99820&Name=bdtic